Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
1800
1500
1200
900
600
300
0
VDS = 120V
VDS = 300V
C
C
iss
VDS = 480V
Coss
6
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
4
C
rss
2
※ Note : ID = 9.5A
0
-1
10
100
101
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2005