Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
V
DS = VGS, ID = 250 ㎂
2.5
--
4.5
V
RDS(ON) Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 0.15 A
14
17.5
Ω
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 ㎂
ID = 250 ㎂, Referenced to25℃
DS = 700 V, VGS = 0 V
700
--
--
--
--
V
ΔBVDSS Breakdown Voltage Temperature
0.65
V/℃
/ΔTJ
Coefficient
IDSS
V
--
--
--
--
1
㎂
㎂
Zero Gate Voltage Drain Current
VDS = 560 V, TC = 125℃
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
--
--
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
-100
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
--
--
--
175
30
5
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Time
--
--
--
--
--
--
--
12
40
20
30
--
30
140
60
80
6.0
--
㎱
㎱
VDS = 350 V, ID = 0.8 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
RG = 25 Ω
㎱
(Note 4,5)
㎱
Qg
Qgs
Qgd
nC
nC
nC
VDS = 560 V, ID = 0.8 A,
VGS = 10 V
--
(Note 4,5)
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
0.3
1.2
1.4
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 0.3 A, VGS = 0 V
--
V
Reverse Recovery Time
IS = 0.8 A, VGS = 0 V
190
0.53
㎱
μC
diF/dt = 100 A/μs (Note 4)
Reverse Recovery Charge
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=96mH, IAS=0.8A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤0.3A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Dec 2008
SEMIHOW [ SEMIHOW CO.,LTD. ]
