2N5153L
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Symbol
V(BR)CEO IC = 100 mA
Test Conditions
Min
80
Typ
Max
Units
Volts
µA
mA
µA
ICES1
ICES2
ICEO
VCE = 60 Volts
VCE = 100 Volts
VCE = 40 Volts
1
1
50
V
CE = 60 Volts, VEB = 2 Volts,
nA
Collector-Emitter Cutoff Current
ICEX
500
TA = 150°C
µA
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current
IEBO1
IEBO1
VEB = 4 Volts
1
1
mA
VEB = 5.5 Volts
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 50 mA, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
TA = -55°C
hFE1
hFE2
hFE3
hFE4
50
70
40
25
200
DC Current Gain
Volts
Volts
Base-Emitter Voltage
VBE
VCE = 5 Volts, IC = 2.5 mA
1.45
VBEsat1
VBEsat2
VCEsat1
VCEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
1.45
2.20
0.75
1.50
Base-Emitter Saturation Voltage
Volts
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
Test Conditions
Min
Typ
Max
Units
VCE = 5 Volts, IC = 500 mA,
|hFE|
7
f = 10 MHz
CE = 5 Volts, IC = 100 mA,
f = 1 kHz
V
hFE
50
V
CB = 10 Volts, IE = 0 mA,
pF
Open Circuit Output Capacitance
COBO
250
f = 1 MHz
Switching Characteristics
µs
µs
µs
µs
Saturated Turn-On Time
tON
ts
0.5
1.4
0.5
1.5
IC = 5 A, IB1= 500 mA,
IB2= -500 mA, VBEoff = 3.7 V,
RL = 6 Ω
Storage Time
Fall Time
tf
Saturated Turn-Off Time
tOFF
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
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