SMALL SIGNAL
NPN RF TRANSISTOR
BFR92, BFR92A
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
(1)
Parameters
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Base Cut-Off
Current
Collector-Emitter Cut-Off
Current (BFR92A)
Emitter-Base Cut-Off
Current (BFR92A)
Forward-current transfer
ratio
Test Conditions
IC = 10µA
IC = 1.0mA
IC = 10µA
VCB = 10V
VCB = 10V
VEB = 1.0V
IC = 14mA
IE = 0
IB = 0
IC = 0
IE = 0
IB = 0
IC = 0
VCE = 10V
BFR92
BFR92A
Min.
20
15
2
Typ.
Max.
Units
(1)
V
(1)
50
50
10
nA
hFE
(1)
25
40
DYNAMIC CHARACTERISTICS
fT
(2)
Transition Frequency
(2)
IC = 14mA
f = 500MHz
VCE = 10V
5
0.4
GHz
CEB
Emitter Base Capacitance
VEB = 0.5V, IC = 0, f = 1.0MHz
VCB = 10V, IE = 0, f = 1.0MHz
CCB
(2)
Collector Base Capacitance
pF
0.5
0.6
BFR92
BFR92A
IC = 2mA, VCE = 10V
NF
(2)
Noise Figure
f = 500MHz for BFR92
f = 800MHz for BFR92A
IC = 14mA, VCE = 10V
2.4
1.8
GUM
(2)
Maximum Unilateral Power
Gain
f = 500MHz for BFR92
f = 800MHz for BFR92A
IC = 14mA, VCE = 10V
18
16
dB
dIM3
(2)
Intermodulation Distortion
RL = 500 , VO = 150mV
f = 500MHz for BFR92
f = 800MHz for BFR92A
-60
-60
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
(2) By Design, not measured as a production test.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
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Email:
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Document Number 8347
Issue 1
Page 2 of 4