SILICON EPITAXIAL
NPN TRANSISTOR
2N5154N2A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
(2)
Collector-Emitter
Breakdown Voltage
V
I
= 10mA
= 60V
80
V
(BR)CEO
C
V
V
V
V
V
V
T
= 0
1.0
1.0
µA
CE
BE
BE
BE
I
Collector Cut-Off Current
CES
= 100V
= 60V
= 0
mA
CE
CE
= -2V
I
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
25
CEX
= 150°C
C
µA
mA
-
I
V
V
V
I
= 60V
= 4V
I = 0
B
50
1.0
1.0
CEO
CE
EB
EB
I
I
= 0
= 0
C
C
I
EBO
= 5.5V
= 50mA
= 2.5A
V
V
T
= 5V
50
70
25
40
C
CE
CE
I
= 5V
200
C
(2)
Forward-current transfer
ratio
h
FE
= -55°C
= 5V
C
I
I
I
I
I
I
= 5A
V
V
C
C
C
C
C
C
CE
(2)
V
= 2.5 A
= 2.5A
= 5A
= 5V
Base-Emitter Voltage
1.45
1.45
2.2
BE
CE
I = 250mA
B
(2)
Collector-Emitter Saturation
Voltage
V
BE(sat)
I = 500mA
B
V
= 2.5A
= 5A
I = 250mA
B
0.75
1.5
(2)
Base-Emitter Saturation
Voltage
V
CE(sat)
I = 500mA
B
DYNAMIC CHARACTERISTICS
Magnitude of common-
emitter, small-signal short-
circuit, forward-current
transfer ratio
I
= 500mA
V
V
= 5V
= 5V
C
CE
CE
h
1.2
-
fe
f = 20MHz
= 100mA
I
C
h
Small-Signal Current Gain
Output Capacitance
50
-
fe
f = 1.0 KHz
= 10V
V
I = 0
E
CB
f = 1.0MHz
C
t
250
pF
obo
V
I
= 30V
I
I
= 5A
Turn-On Time
Storage Time
Fall Time
0.5
1.4
0.5
1.5
on
CC
= 500mA
C
t
t
t
= - I
s
B1
B2
B1
µS
R = 6Ω
f
L
Turn-Off Time
off
Notes
(2)
Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Document Number 9081
Issue 2
Page 2 of 3
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
SEME-LAB [ SEME LAB ]
