2N5014
MECHANICAL DATA
Dimensions in mm (inches)
SILICON EPITAXIAL
NPN TRANSISTOR
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
0.89
(0.035)
max.
12.70
(0.500)
min.
FEATURES
0.41 (0.016)
0.53 (0.021)
dia.
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO–39 PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
A
900V
900V
V
V
V
Collector – Base Voltage
CBO
CER
EBO
Collector – Emitter Voltage
Emitter – Base Reverse Voltage
Continuous Collector Current
Total Device Dissipation
R = 10Ω
5V
2W
I
C
3.5A
P
T = 25°C
C
TOT
200°C
-55 to 200°C
T
T
Maximum Operating Junction Temperature
and Storage Temperature Range
J
STG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Parameter
Test Conditions
Min.
Typ.
Max. Unit
I
Collector Base Leakage Current
D.C Current Gain
V
= 900V
= 10V
mA
—
0.012
180
CBO
CB
CE
hFE
fae
V
I =0.02A
C
20
MHz
20
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3070
Issue 1
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