2N3904
S E M E
LA B
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Test Conditions
Min.
40
Typ.
Max. Unit
V
V
V
Collector – Emitter Breakdown Voltage I = 1mA
I = 0
(BR)CEO*
(BR)CBO
(BR)EBO
C
B
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Base Cut-off Current
I = 10 A
I = 0
60
V
C
E
I = 10 A
I = 0
6
E
C
I
I
V
V
= 30V
= 3V
50
nA
50
BL
CEX
CE
EB
Collector – Emitter Cut-off Current
I = 10mA
I = 1mA
0.2
V
C
B
V
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
CE(sat)
BE(sat)*
I = 50mA
I = 5mA
0.3
C
B
I = 10mA
I = 1mA
0.65
0.85
V
C
B
V
I = 50mA
I = 5mA
0.95
C
B
I = 0.1mA
40
70
C
I = 1mA
C
h
DC Current Gain
V
= 1V
I = 10mA
100
60
300
—
FE*
CE
C
I = 50mA
C
I = 100mA
30
C
* Pulse Test: t
300 s,
2%.
p
SMALL SIGNAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V
= 20V
I = 10mA
CE
C
f
Current Gain Bandwidth Product
300
MHz
t
f = 100MHz
= 5V
V
I = 0
E
CB
C
C
Output Capacitance
Input Capacitance
4
8
pF
pF
ob
f = 1MHz
= 0.5V
V
I = 0
C
BE
ib
f = 1MHz
h
h
h
h
Input Impedance
1
1
10
40
8
k
ie
V
= 10V
CE
Output Admittance
hmos
x 10-4
—
oe
re
fe
I = 1mA
C
Voltage Feedback Ratio
Small Signal Current Gain
0.5
100
f = 1kHz
400
V
= 5V
I = 100 A
C
CE
N
Noise Figure
5
dB
F
f = 1kHz
R = 1k
S
SWITCHING CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Delay Time
Rise Time
Test Conditions
Min.
Typ.
Max. Unit
35
t
t
t
t
V
= 3V
V = 0.5V
d
CC
BE
I = 10mA
I
= 1mA
B1
35
ns
r
C
Storage Time
Fall Time
V
= 3V
V = 0.5V
BE
200
s
f
CC
I
= I = 1mA
50
B1
B2
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Prelim. 7/00
SEME-LAB [ SEME LAB ]
