SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N3799X
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
(1)
Collector-Emitter
Breakdown Voltage
Collector-Base
V
I
I
= -10mA
= -10µA
I = 0
B
-60
(BR)CEO
C
C
V
I = 0
E
V
-50
-5
(BR)CBO
Breakdown Voltage
Emitter-Base Breakdown
Voltage
V
I = -10µA
I = 0
C
(BR)EBO
E
V
= -50V
I = 0
E
-0.01
µA
-10
CB
I
Collector Cut-Off Current
Emitter Cut-Off Current
CBO
T
I
= 150°C
A
I
V
I
= -4V
= 0
-20
-0.2
-0.25
-0.7
-0.8
-0.7
nA
EBO
EB
C
= -100µA
= -1.0mA
= -100µA
= -1.0mA
= -100µA
= -1.0µA
= -10µA
I = -10µA
C
B
(1)
Collector-Emitter Saturation
Voltage
V
CE(sat)
I
I
I
I
I
I
I
I = -100µA
C
C
C
C
C
C
C
B
I = -10µA
V
B
(1)
Base-Emitter Saturation
Voltage
V
BE(sat)
I = -100µA
B
V
V
V
V
V
T
= -5V
= -5V
= -5V
= -5V
Base-Emitter On Voltage
BE(on)
CE
CE
CE
CE
75
225
300
150
300
300
250
= -100µA
(1)
Forward-current transfer
ratio
h
= -55°C
= -5V
FE
A
I
I
I
= -500µA
= -1.0mA
= -10mA
V
V
V
C
C
C
CE
= -5V
= -5V
CE
CE
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
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Document Number 8240
Issue 1
Page 2 of 3
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