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2N3440CSM4R 参数 Datasheet PDF下载

2N3440CSM4R图片预览
型号: 2N3440CSM4R
PDF下载: 下载PDF文件 查看货源
内容描述: 高压,中功率NPN晶体管在密封陶瓷表面贴装封装,高可靠性的 [HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS]
分类和应用: 晶体晶体管高压
文件页数/大小: 2 页 / 19 K
品牌: SEME-LAB [ SEME LAB ]
 浏览型号2N3440CSM4R的Datasheet PDF文件第1页  
2N3439CSM4R  
2N3440CSM4R  
ELECTRICAL CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Collector Emitter Sustaining Voltage  
Test Conditions  
Min.  
350  
Typ.  
Max. Unit  
V
2N3439CSM4R  
2N3440CSM4R  
2N3439CSM4R  
2N3440CSM4R  
CEO(sus)*  
V
I = 50mA  
C
(I = 0)  
250  
B
I
I
I
I
Collector Cut-off Current  
500  
A
500  
CEX*  
(V = 1.5V)  
BE  
Collector Base Cut-off Current  
V
V
V
V
V
= 360V 2N3439CSM4R  
= 250V 2N3440CSM4R  
= 300V 2N3439CSM4R  
= 200V 2N3440CSM4R  
= 6V  
20  
A
CBO*  
CB  
CB  
CE  
CE  
EB  
(I = 0)  
20  
E
Collector Cut-off Current  
20  
A
50  
CEO*  
(I = 0)  
B
A
Emitter Cut-off Current (I = 0)  
20  
0.5  
1.3  
EBO*  
C
V
V
Collector Emitter Saturation Voltage I = 50mA  
I = 4mA  
B
CE(sat)*  
BE(sat)*  
FE*  
C
V
Base Emitter Saturation Voltage  
I = 50mA  
I = 4mA  
B
C
h
DC Current Gain  
I = 20mA  
V
= 10V  
CE  
40  
30  
C
2N3439CSM4R only  
I = 20mA = 10V  
V
C
CE  
* Pulse test t = 300 s ,  
2%  
p
DYNAMIC CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
f
Transition Frequency  
I = 10mA  
V
CE  
= 10V  
f = 5MHz  
f = 10MHz  
f = 1kHz  
15  
MHz  
T
C
C
h
Output Capacitance  
V
= 10V  
10  
pF  
ob  
CB  
Small Signal Current Gain I = 5mA  
V
= 10V  
25  
C
CE  
fe  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk  
Prelim. 11/98  
Website http://www.semelab.co.uk  
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