2N3439
2N3440
MECHANICAL DATA
Dimensions in mm (inches)
HIGH VOLTAGE
NPN TRANSISTORS
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
FEATURES
• DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
6.10 (0.240)
6.60 (0.260)
• HIGH VOLTAGE
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
APPLICATIONS:
These devices are particularly suited as
drivers in high-voltage low current inverters,
switching and series regulators.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO39 PACKAGE (TO-205AD)
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
2N3439
2N3440
V
V
V
Collector – Base Voltage (I = 0)
450V
300V
CBO
CEO
EBO
E
Collector – Emitter Voltage (I = 0)
350V
250V
B
Emitter – Base Voltage (I = 0)
7V
1A
C
I
I
Collector Current
Base Current
C
0.5A
5W
1W
B
P
Total Power Dissipation at T
≤ 25°C
≤ 50°C
tot
case
T
amb
T
T
Storage Temperature
Junction Temperature
–65 to 200°C
200°C
stg
j
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 3066
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Issue: 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk