2N2920
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
amb
Test Conditions 1
Parameter
Min.
Typ.
Max.
Unit
INDIVIDUAL TRANSISTOR CHARACTERISTICS
V
V
V
Collector – Base Breakdown Voltage
I = 10 A
I = 0
60
60
6
(BR)CBO
(BR)CEO*
(BR)EBO
C
E
V
Collector – Emitter Breakdown Voltage I = 10mA
I = 0
C
B
Emitter – Base Breakdown Voltage
Collector Cut-off Current
I = 10 A
I = 0
C
E
nA
A
V
= 45V
I = 0
2
10
2
CB
E
I
CBO
T = 150°C
A
I
I
Collector Cut-off Current
Emitter Cut-off Current
V
V
V
= 5V
= 5V
= 5V
I = 0
B
CEO
CE
EB
CE
nA
—
V
I = 0
2
EBO
C
I = 10 A
150
40
600
C
T = –55°C
A
h
DC Current Gain
FE
V
V
V
= 5V
= 5V
= 5V
I = 100 A
225
300
CE
CE
CE
C
I = 1mA
C
V
V
Base – Emitter Voltage
I = 100 A
0.70
0.35
BE
C
Collector – Emitter Saturation Voltage I = 100 A
I = 1mA
C
CE(sat)
ib
B
h
Small Signal Common – Base
Input Impedance
V
= 5V
I = 1mA
C
CB
25
3
32
1
f = 1kHz
= 5V
h
Small Signal Common – Base
Output Admittance
V
I = 1mA
C
ob
CB
mho
—
f = 1kHz
= 5V
|h |
Small Signal Common – Base
Current Gain
V
I = 500 A
C
fe
CE
f = 20MHz
= 5V
C
Common – Base Open Circuit
Output Capacitance
V
I = 0
E
obo
CB
pF
6
f = 140kHz to 1MHz
* Pulse Test: t = 300 s ,
1%.
p
Parameter
Test Conditions
Min.
Typ.
Max. Unit
TRANSISTOR MATCHING CHARACTERISTICS
h
Static Forward Current Gain
V
= 5V
I = 100 A
C
FE1
FE2
CE
—
0.9
1
h
Balance Ratio
See Note 2.
V
V
V
= 5V
= 5V
I = 100 A
3
5
CE
CE
CE
A1
C
mV
|V
– V
| Base – Emitter Voltage Differential
BE1
BE2
I = 10 A to 1mA
C
| (V
– V
) T |
= 5V
I = 100 A
C
BE1
BE2
A
0.8
1
Base – Emitter Voltage Differential
Change With Temperature
T
= 25°C
= 5V
T
= –55°C
A2
mV
V
I = 100 A
C
CE
T
= 25°C
T
= 125°C
A2
A1
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as h
.
FE1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 9/95
SEME-LAB [ SEME LAB ]
