SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2907A
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Test Conditions
IC = -10mA
IC = -10µA
IE = -10µA
VCE = -30V
VCB = -50V
IB = 0
IE = 0
IC = 0
VBE = -0.5V
IE = 0
TA = 150°C
IC = -150mA
IC = -500mA
IC = -150mA
IC = -500mA
IC = -0.1mA
IC = -1.0mA
IB = -15mA
IB = -50mA
IB = -15mA
IB = -50mA
VCE = -10V
VCE = -10V
VCE = -10V
VCE = -10V
VCE = -10V
Min.
-60
-60
-5
Typ
Max.
Units
V(BR)CBO
V(BR)EBO
ICEX
ICBO
(1)
V
-50
-0.01
-10
-0.4
-1.6
-0.6
-1.3
-2.6
75
100
100
100
50
300
nA
µA
VCE(sat)
V
VBE(sat)
(1)
hFE
(1)
Forward-current transfer
ratio
IC = -10mA
IC = -150mA
IC = -500mA
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = -50mA
f = 100MHz
Output Capacitance
VCB = -10V
f = 1.0MHz
Input Capacitance
VEB = -2V
f = 1.0MHz
Turn-On Time
IC = -150mA
IB1 = -15mA
IC = -150mA
VCC = -30V
VCC = -30V
45
ns
300
IC = 0
30
IE = 0
8
pF
VCE = -20V
200
MHz
Cobo
Cibo
ton
toff
Turn-Off Time
IB1 = - IB2 = -15mA
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3553
Issue 2
Page 2 of 3
SEME-LAB [ SEME LAB ]
