SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2906A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
(1)
Collector-Emitter
Breakdown Voltage
Collector-Base
V
I
I
= -10mA
= -10µA
I = 0
B
-60
(BR)CEO
C
C
V
I = 0
E
V
-60
-5
(BR)CBO
Breakdown Voltage
Emitter-Base Breakdown
Voltage
V
I = -10µA
I = 0
C
(BR)EBO
E
I
V
V
= -30V
= -50V
V
= -0.5V
Collector Cut-Off Current
-50
nA
-10
CEX
CE
CB
BE
I = 0
E
I
Collector Cut-Off Current
CBO
T
= 150°C
-10
-0.4
-1.6
-1.3
-2.6
µA
V
A
I
= -150mA
= -500mA
= -150mA
= -500mA
= -0.1mA
= -1.0mA
= -10mA
I = -15mA
B
C
(1)
Collector-Emitter Saturation
Voltage
V
CE(sat)
I
I
I
I
I
I
I
I
I = -50mA
B
C
C
C
C
C
C
C
C
I = -15mA
B
(1)
Base-Emitter Saturation
Voltage
V
BE(sat)
I = -50mA
B
V
V
V
V
V
= -10V
= -10V
= -10V
= -10V
= -10V
40
40
40
40
40
CE
CE
CE
CE
CE
(1)
Forward-current transfer
ratio
h
FE
= -150mA
= -500mA
120
DYNAMIC CHARACTERISTICS
I
= -50mA
V
= -20V
C
CE
f
Transition Frequency
Output Capacitance
Input Capacitance
Turn-On Time
170
MHz
pF
T
f = 100MHz
= -10V
V
I = 0
E
CB
f = 1.0MHz
= -2V
C
C
t
8
obo
ibo
V
I = 0
C
EB
f = 1.0MHz
30
I
I
I
I
= -150mA
= -15mA
V
= -30V
C
CC
CC
45
on
B1
ns
= -150mA
V
= -30V
C
t
Turn-Off Time
300
off
= - I = -15mA
B2
B1
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
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Document Number 6299
Issue 2
Page 2 of 3
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