SILICON EPITAXIAL
PLANAR DIODE
1N6640D2A / 1N6640D2B
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
75
Max. Units
V
I = 10µA
R
Breakdown Voltage
BR
I = 1.0mA
F
0.540
0.620
0.860
I = 50mA
F
0.760
I = 100mA
F
V
0.820
0.920
1.0
(2)
V
F
Forward Voltage
Reverse Current
I = 200mA
F
0.870
T
= -55°C
1.1
A
I = 500mA
F
1.2
V = 50V
R
100
90
nA
µA
I
R
T
= +150°C
A
DYNAMIC CHARACTERISTICS
V = 0V
R
f = 1.0MHz
C
Capacitance
2.5
4
pF
ns
Vsig = 50mV (p-p)
t
I = I
= 10mA
Reverse Recovery Time
Forward Recovery Voltage
Forward Recovery Time
rr
F
RM
V
5
V(pk)
ns
fr
I = 200mA
F
t
10
fr
Notes
(2)
Pulse Width ≤ 300us, δ ≤ 2%
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Document Number 8953
Issue 1
Page 2 of 4
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