SILICON EPITAXIAL
PLANAR DIODE
1N6642D2A / 1N6642D2B
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
V
I = 100µA
R
Breakdown Voltage
100
BR
I = 10mA
F
0.8
I = 100mA
F
V
1.2
0.8
1.2
25
(2)
V
F
Forward Voltage
Reverse Current
I = 10mA
F
T
T
= 150°C
= -55°C
A
A
I = 100mA
F
V = 20V
R
nA
µA
V = 75V
R
500
50
I
R
V = 20V
R
T
= 150°C
A
V = 75V
R
100
DYNAMIC CHARACTERISTICS
V = 0V
R
4.7
4.7
C
Capacitance
f = 1.0MHz
pF
ns
V = 1.5V
R
I = IR = 10mA R = 100Ω
F
L
t
Reverse Recovery Time
5
rr
I
= 1.0mA
REC
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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Document Number 8272
Issue 2
Page 2 of 4
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