SM5009 series
5009AN×/CN× series
3V operation: V
DD
= 2.7 to 3.3V, V
SS
= 0V, Ta =
−20
to 80°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
min
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2
HIGH-level output voltage
V
OH
Q: Measurement cct 1, I
OH
= 8mA
SM5009AN3S, CF5009AN3
SM5009AN4S, CF5009AN4
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
SM5009CN1S, CF5009CN1
SM5009CN2S, CF5009CN2
2.2
typ
–
max
–
Unit
V
2.1
–
–
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
V
OL
V
IH
V
IL
I
Z
Q: Measurement cct 1, I
OL
= 8mA
INHN
INHN
Q: Measurement cct 2, INHN = LOW, V
OH
= V
DD
Q: Measurement cct 2, INHN = LOW, V
OL
= V
SS
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2
INHN = open, Measurement cct 3,
load cct 2, C
L
= 15pF,
40MHz crystal oscillator
SM5009AN3S, CF5009AN3
SM5009AN4S, CF5009AN4
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
INHN = open, Measurement cct 3,
load cct 2, C
L
= 15pF,
30MHz crystal oscillator,
Ta = –10 to +70°C
SM5009CN1S, CF5009CN1
SM5009CN2S, CF5009CN2
–
2.0
–
–
–
–
–
–
–
–
–
–
–
40
–
0.4
5.58
–
–
–
–
–
8
5
4
3
3
2
7
4
–
–100
–
6
10
0.4
–
0.3
10
V
V
V
µA
10
17
11
9
7
6
5
15
9
200
–
1.1
6.42
10.7
kΩ
Ω
MΩ
pF
pF
mA
Current consumption
I
DD
INHN pull-up resistance
Negative resistance
Feedback resistance
Built-in capacitance
R
UP
−R
L
R
f
C
G
C
D
Measurement cct 4, V
DD
= 3V, INHN = V
SS
V
DD
= 3V, Ta = 25°C, 40MHz
Measurement cct 5
Design value. A monitor pattern on a wafer is tested.
9.3
SEIKO NPC CORPORATION —8
SEIKO [ SEIKO EPSON CORPORATION ]
