STT3434
Elektronische Bauelemente
6.1 A, 30 V, RDS(ON) 34 mΩ
N-Channel Enhancement Mode Power Mos.FET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate Leakage Current
Zero Gate Voltage Drain Current (Tj=25
℃
)
Zero Gate Voltage Drain Current (Tj=75
℃
)
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
Min.
30
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
20
-
-
-
-
-
8
1.9
2.6
21
45
40
30
Max.
-
-
-
±100
1
5
34
50
12
-
-
-
-
-
-
Unit
V
V
S
nA
uA
Test Conditions
V
GS
= 0, I
D
= 250uA
V
DS
= V
GS
, I
D
= 1mA
V
DS
= 10V, I
D
= 6.1A
V
GS
= ±12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 4.5 V, I
D
= 6.1 A
V
GS
= 2.5 V, I
D
= 2.0 A
I
D
= 6.1 A
V
DS
= 15 V
V
GS
= 4.5 V
V
DS
= 15 V
I
D
= 1 A
V
GS
= 4.5 V
R
G
= 6
Ω
R
L
= 15
Ω
Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
mΩ
nC
ns
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Notes:
Symbol
V
SD
T
rr
Min.
-
-
Typ.
-
40
Max.
1.2
-
Unit
V
ns
Test Conditions
I
S
= 1.7 A, V
GS
= 0 V
I
S
= 1.7 A, dl/dt = 100A/us
1. Pulse width limited by Max. junction temperature.
2. Pulse width300us, duty cycle
≦
2%.
2
3. Surface mounted on 1 in copper pad of FR4 board, t
≦
5 sec; 180°C/W when mounted on Min. copper pad.
01-June-2005 Rev. A
Page 2 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
