MMBTA42
Elektronische Bauelemente
FEATURES
·
·
·
Plastic-Encapsulate Transistors
Power dissipation & Collector current
Pcm: 0.3W Icm: 0.3A
High voltage V
(BR)
: 300V
A
COLLECTOR
General Purpose Transistor
RoHS Compliant Product
NPN Silicon
A suffix of "-C" specifies halogen & lead-free
SOT-23
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
L
3
1
3
1
BASE
Top View
G
2
B S
V
2
EMITTER
1
2
3
C
D
H
K
J
All Dimension in mm
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Tamb=25
¥
unless
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
H
FE
（
1
）
otherwise
Test
specified
MIN
300
300
5
0.25
0.1
60
100
60
0.2
0.9
V
V
200
MAX
UNIT
V
V
V
conditions
I
E
=0
Ic= 100
μ
A，
Ic= 1 mA，
I
B
=0
I
E
= 100
μ
A， I
C
=0
V
CB
=200 V , I
E
=0
V
EB
= 5V ,
I
C
=0
μ
A
μ
A
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20 mA, I
B
= 2mA
I
C
= 20 m A, I
B
=2mA
V
CE
= 20V, I = 10mA
C
DC current gain
H
FE
（
2
）
H
FE
（
3
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
Transition frequency
f
T
f=
30MHz
50
MHz
DEVICE MARKING
MMBTA42=1D
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-June-2004 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
