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MMBT3906 参数 Datasheet PDF下载

MMBT3906图片预览
型号: MMBT3906
PDF下载: 下载PDF文件 查看货源
内容描述: -200毫安, -40 V ​​PNP塑料封装晶体管 [-200 mA, -40 V PNP Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 5 页 / 1061 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
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MMBT3906
Elektronische Bauelemente
-200 mA, -40 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Collector current capability I
C
=-200mA
Collector-emitter voltage V
CEO
=-40V.
SOT-23
APPLICATION
General switching and amplification.
A
3
L
3
PACKAGING DIMENSION
1
Top View
2
C B
1
2
K
Collector
E
D

F
G
H
J

Base

Emitter
Millimeter
REF.
A
Min.
2.80
2.25
1.20
0.90
1.80
0.30
Max.
3.00
2.55
1.40
1.15
2.00
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
MARKING
B
C
D
E
F
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Total Device Dissipation FR-5 Board , T
A
=25°C
Total Device Dissipation FR-5 Board, Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate , T
A
=25°C
Total Device Dissipation Alumina Substrate, Derate above 25°C
Thermal Resistance, Junction to Ambien
Junction, Storage Temperature
(2)
(1)
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
R
θJA
P
D
R
θJA
T
J
, T
STG
RATINGS
-40
-40
-5.0
-200
225
1.8
556
300
2.4
417
-55 ~ +150
UNIT
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C / W
mW
mW/°C
°C / W
°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Aug-2010 Rev. D
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