MMBT2222A
NPN Silicon
Elektronische Bauelemente
RoHS Compliant Product
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMBT2907A)
Ideal for Medium Power Amplification and
Switching
1
BASE
COLLECTOR
A
L
3
3
Top View
1
2
3
B S
1
2
V
2
EMITTER
G
C
D
H
K
J
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
2222
30
60
5.0
600
2222A
40
75
6.0
Unit
Vdc
Vdc
Vdc
mAdc
SOT-23
Dim
A
B
C
D
G
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
H
J
K
L
S
V
All Dimension in mm
DEVICE MARKING
MMBT2222 = M1B; MMBT2222A = 1P
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = 10
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage (IE = 10
m
Adc, IC = 0)
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
1. FR±5 = 1.0
x
0.75
x
0.062 in.
2. Alumina = 0.4
x
0.3
x
0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
30
40
60
75
5.0
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
10
0.01
0.01
10
10
100
20
Vdc
Vdc
Vdc
nAdc
µAdc
IEBO
IBL
nAdc
nAdc
REM : Thermal
Clad is a trademark of the Bergquist Company.
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
5
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
