BCP69
Elektronische Bauelemente
RoHS Compliant Product
PNP
Transistor
Silicon
Epitaxial
Transistor
SOT-223
Description
The
BCP69
is designed for guse
in
low voltage and medium power
applications.
Features
*
V
CEO
: -20V
*
I
C
: 1A
REF.
A
C
D
E
I
H
BCP69
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
MAXIMUM RATINGS* (T
amb
=25 C, unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
Parameter
Value
- 25
- 20
-5
-1
1.5
-65~-150
Units
V
V
V
A
W
O
o
I
C
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
o
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)1
*V
BE
(on)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Min
- 25
- 20
-5
-
-
-
-
50
85
60
-
Typ.
-
-
-
-
-
-
-
-
-
-
60
Max
-
-
-
- 10
- 10
- 500
- 1.0
-
375
-
-
Uni
V
V
V
uA
uA
mV
Test Conditions
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=- 25V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-1mA, I
B
=-100mA
V
V
CE
=-1V, I
C
=-1A
V
CE
=-10V, I
C
=-5mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-1V, I
C
=-1A
MH z V
CE
=- 5V, I
C
=-10 mA
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
