Elektronische Bauelemente
BC817-16
BC817-25
NPN Transistor
BC817-40
RoHS Compliant Product
FEATURES
n
A suffix of "-C" specifies halogen & lead-free
SOT-23
n
n
n
n
n
n
n
Power dissipation
P
CM:
300 mW (Tamb=25 C)
Collector current
I
CM:
500 mA
Collector-base voltage
V
(BR)CBO
: 30 V
Operating and junction temperature range
T
J
, T
stg
: -55 C to +150 C
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
o
o
o
3
1
2
A
L
B S
COLLECTOR
Dim
A
B
C
D
G
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
3
1
BASE
3
2
EMITTER
2
H
J
K
L
S
Top View
1
V
G
C
D
H
K
J
V
All Dimension in mm
ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage & saturation
voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
&
V
BE(sat)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
o
Ic=
100
µA, I
E
=0
Ic=
10
mA, I
B
=0
I
E
=
1
µA, I
C
=0
V
CB
=
45
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
1
V, I
C
=
100
mA
V
CE
=
1
V, I
C
=
500
mA
I
C
=
500
mA, I
B
=
50
mA
V
CE
=
1
V, I
C
=
500
mA
I
C
=
500
mA, I
B
=
50
mA
V
CE
=
5
V, I
C
=
10
mA, f=
100
MHz
V
CB
=
10
V, f=
1
MHz
50
45
5
0.1
0.1
100
40
600
µA
µA
0.7
1.2
100
10
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
BC817-16
100-250
6A
BC817-25
160-400
6B
BC817-40
250-600
6C
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2007 Rev.
C
Page 1 of
2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
