BAW56
Elektronische Bauelemente
RoHS Compliant Product
Dual Chips Common Anode
Surface Mount Switching Diode
FEATURES
A suffix of "-C" specifies halogen & lead-free
A
L
3
·
·
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
V
CATHODE
3
1
Top View
2
B S
G
C
ANODE
1
2
CATHODE
1
2
3
D
H
K
J
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
SOT-23
Dim
A
B
C
D
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
G
H
J
K
L
S
V
All Dimension in mm
DEVICE MARKING
BAW56 = A1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100
µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100
Ω
1. FR– 5 = 1.0 X 0.75 X 0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
V(BR)
IR
—
—
—
CD
VF
—
—
—
—
trr
—
715
855
1000
1250
6.0
ns
—
30
2.5
50
2.0
pF
mVdc
70
—
Vdc
µAdc
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
