Elektronische Bauelemente
RoHS Compliant Product
Dual Series Chips
Surface Mount Switching Diode
BAV99W
FEATURES
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
A suffix of "-C" specifies halogen & lead-free
A
L
3
Top View
1
2
B S
V
ANODE
C ATHODE
G
C
1
2
C ATHODE
SC-70
SOT-323
3
ANODE
D
H
K
J
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
70
215
500
Unit
Vdc
mAdc
mAdc
SOT-323(SC-70)
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
1.800
1.150
0.800
0.300
1.200
0.000
0.100
0.350
0.590
2.000
0.280
Max
2.200
1.350
1.000
0.400
1.400
0.100
0.250
0.500
0.720
2.400
0.420
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
200
1.6
R
q
JA
PD
625
300
2.4
R
q
JA
TJ, Tstg
417
– 65 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
All Dimension in mm
DEVICE MARKING
BAV99W = A7, KJG
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100
µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100
Ω
V(BR)
IR
—
—
—
CD
VF
—
—
—
—
trr
—
715
855
1000
1250
6.0
ns
—
30
2.5
50
1.5
pF
mVdc
70
—
Vdc
µAdc
1. FR– 5 = 1.0 X 0.75 X 0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01
-Jun-2004 Rev. B
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