BAV70
Elektronische Bauelemente
Dual Chips Common Cathode
Surface Mount Switching Diode
820
Ω
+10 V
2.0 k
100
µH
0.1
µF
DUT
50
Ω
Output
Pulse
Generator
50
Ω
Input
Sampling
Oscilloscopes
VR
Input Signal
90%
IR
I
R(REC) = 1.0 mA
Output Pulse
(IF = IR = 10 mA;
Measured
at I
R(REC) = 1.0 mA)
IF
0.1
µF
tr
10%
tp
t
IF
trr
t
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
Curves Applicable to Each Anode
100
10
TA = 150°C
TA = 85°C
IF,
Forward Current
(mA)
10
TA = – 40°C
IR ,
Reverse Current
(µA)
1.0
TA = 125°C
0.1
TA = 85°C
1.0
TA = 25°C
TA = 55°C
0.01
TA = 25°C
0.1
0.2
0.4
0.6
0.8
VF,
Forward Voltage (V)
1.0
1.2
0.001
0
10
20
30
VR,
Reverse Voltage (V)
40
50
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.0
CD,
Diode Capacitance
(pF)
0.9
0.8
0.7
0.6
0
2
4
VR,
Reverse Voltage (V)
6
8
Figure 4. Capacitance
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
