BAS16
Elektronische Bauelemente
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
3
Surface Mount Switching Diode
·
·
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
V
3
1
Top View
2
B S
G
C
3
CATHODE
1
ANODE
1
2
D
H
K
J
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
SOT-23
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
All Dimension in mm
DEVICE MARKING
BAS16 = A6
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100
µAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50
Ω)
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500
Ω)
1.FR–5 = 1.0 X 0.75 X 0.062 in.
http://www.SeCoSGmbH.com
IR
—
—
—
V(BR)
VF
—
—
—
—
CD
VFR
trr
QS
—
—
—
—
715
855
1000
1250
2.0
1.75
6.0
45
75
1.0
50
30
—
µAdc
Vdc
mV
pF
Vdc
ns
pC
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
