BAS40/-04/-05/-06
Elektronische Bauelemente
Surface Mount Schottky Barrier Diodes
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Turn-on Voltage
Low Forward Voltage
Very Low Capacitance
Less Than 5.0pF @ 0V
For high speed switching application,
circuit protection
3
Collector
1
SOT-23
Dim
A
B
C
D
G
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
Base
2
Emitter
A
MECHANICAL DATA
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
1
L
3
H
K
2
J
J
K
C
Top View
B S
L
S
V
V
G
D
H
All Dimension in mm
3
3
3
3
1
2
1
2
1
2
1
2
BAS40 Marking: 43
BAS40-04 Marking: 44
BAS40-05 Marking: 45
BAS40-06 Marking: 46
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Reverse Voltage
Forward Continuous Current
Single Forward Current, t≦10 ms
Thermal Resistance
(Note 1)
Junction−to−Ambient (Note 2)
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Junction, Storage Temperature
T
J
, T
STG
P
F
Symbol
V
R
I
F
I
FSM
R
θJA
Ratings
40
200
600
508
311
325
1.8
-55 ~ +150
Unit
V
mA
mA
°C/W
mW
mW /
°C
°C
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
Symbol
V
(BR)R
I
R
V
F1
V
F2
C
TOT
t
RR
Min.
40
-
-
-
-
-
Max.
-
200
380
1000
5.0
5
Unit
V
nA
mV
mV
pF
nS
V
R
= 30V
I
F
= 1mA
Test Conditions
I
R
= 10
μA
I
F
= 40mA
V
R
= 0, f=1MHz
I
RR
= 1 mA, I
R
=I
F
=10mA, R
L
=100Ω
http://www.SeCoSGmbH.com
Any changes of specification will not be informed individually.
22-Sept-2008 Rev.C
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
