B772
Elektronische Bauelemente
PNP Type
Plastic Encapsulate Transistors
Typical Characteristics
1000
-2.0
V
CE
= -2V
I
C
[A], COLLECTOR CURRENT
-1.6
-1.2
I
B
= -8mA
I
B
= -7mA
I
B
= -6mA
I
B
= -5mA
h
FE
, DC CURRENT GAIN
I
B
= -10mA
I
B
= -9mA
100
-0.8
I
B
= -4mA
I
B
= -3mA
I
B
= -2mA
I
B
= -1mA
0
-4
-8
-12
-16
-20
10
-0.4
1
-1
-10
-100
-1000
-10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
CE
(sat),V
BE
(sat)[mV] SATURATION VOLTAGE
-10000
I
C
= 10· I
B
1000
I
E
= 0
f=1MHz
-1000
V
BE
(sat)
-100
C
ob
[pF], CAPACITANCE
-100
-1000
-10000
100
10
-10
V
CE
(sat)
-1
-1
-10
1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
V
CE
=5V
-10
I
C
MAX(Pulse)
10
ms
Dis
Lim sipat
ite ion
d
1m
s
s
0u
10
100
I
C
[A], COLLECTOR CURRENT
I
C
MAX(DC)
-1
s/b
Lim
ite
d
-0.1
10
V
CEO
MAX
1
-0.01
-0.1
-1
-0.01
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
http://www.SeCoSGmbH.com/
01-Jun-2004 Rev.
B
Any changing of specification will not be informed individual
Page
2of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
