A92
Elektronische Bauelemente
-0.5A , -300V
PNP Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage.
G
H
TO-92
J
CLASSIFICATION OF h
FE (2)
Product-Rank
Range
A92-A
80~100
A92-B1
100~150
A92-B2
150~200
A92-C
200~250
K
A
B
D
1
Emitter
2
Base
3
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
E
C
F
Collector
3
2
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Thermal Resistance From Junction to Ambient
Thermal Resistance From Junction to Case
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
R
θJA
R
θJC
Rating
-300
-300
-5
-500
625
150, -55~150
200
83.3
Unit
V
V
V
mA
mW
°
C
° / mW
C
° / mW
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
h
FE (3)
V
CE(sat)
V
BE(Sat)
f
T
Min.
-300
-300
-5
-
-
60
80
60
-
-
50
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.25
-0.1
-
250
-
-0.2
-0.9
-
Unit
V
V
V
µA
µA
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -200V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -80mA
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
V
CE
= -20V, I
C
= -10mA, f=30MHz
V
V
MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
