A1015
Elektronische Bauelemente
-0.15A , -50V
PNP Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power Dissipation
G
H
TO-92
J
CLASSIFICATION OF h
FE
Product-Rank
Range
A1015-O
70~140
A1015-Y
120~240
A1015-GR
200~400
K
A
B
D
1
Emitter
2
Collector
3
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
E
C
F
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Rating
-50
-50
-5
-150
400
125, -55~125
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
NF
Min.
-50
-50
-5
-
-
-
70
-
-
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-0.1
400
-0.3
-1.1
-
7
6
Unit
V
V
V
µA
µA
µA
V
V
MHz
pF
dB
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -0.1mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -50V, I
E
=0
V
CE
= -50V, I
B
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -2mA
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -10V, I
C
= -1mA, f=30MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -6V, I
C
= -0.1mA, f=1KHz,
R
G
=10K
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
