8550SST
Elektronische Bauelemente
-1.5A , -40V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
General Purpose Switching and Amplification.
G
H
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
8550SST-B
85~160
8550SST-C
120~200
8550SST-D
160~300
K
J
A
B
D
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
-40
-25
-5
-1.5
1
125
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
f
T
Min
-40
-25
-5
-
-
-
85
40
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-0.1
-0.1
-0.1
300
-
-0.5
-1.2
-
Unit
V
V
V
μA
μA
μA
Test condition
I
C
= -0.1mA, I
E
=0
I
C
= -0.1mA, I
B
=0
I
E
= -0.1mA, I
C
=0
V
CB
= -40V, I
E
=0
V
CE
= -20V, I
B
=0
V
EB
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
= -800mA, I
B
= -80mA
I
C
= -800mA, I
B
= -80mA
V
CE
= -10V, I
C
= -50mA, f=30MHz
V
V
MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
