2SD602 / 2SD602A
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown
2SD602
Voltage
2SD602A
Collector to Emitter Breakdown 2SD602
Voltage
2SD602A
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
*Pulse test: Pulse width≦350µS, duty cycle≦2.0%
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
*
h
FE (1)
*
h
FE (2)
*
V
CE(sat)
f
T
C
ob
Min.
30
60
25
50
5
-
-
85
40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
200
-
Max.
-
-
-
-
-
0.1
0.1
340
-
0.6
-
15
Unit
V
V
V
µA
µA
Test Conditions
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=500mA
V I
C
=300mA, I
B
=30mA
MHz V
CE
=10V, I
C
=50mA, f=200MHz
pF V
CB
=10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 2 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
