2SD602, 602A
Elektronische Bauelemente
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
For general amplification
Complementary to 2SB710 and 2SB710A
Low collector to emitter saturation voltage V
CE(sat)
3
Collector
1
Base
SOT-23
Dim
A
2
Emitter
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
B
C
D
G
MARKING CODE
2SD602:
2SD602A:
WQ1, WR1, WS1
XQ, XR, XS
1
3
A
L
K
B S
2
H
J
J
K
C
Top View
L
S
V
V
G
D
H
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
2SD602
2SD602A
2SD602
2SD602A
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
STG
Ratings
30
60
25
50
5
500
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(pulse test)
DC Current Gain (pulse test)
Transition Frequency
Output Capacitance
TEST CONDITIONS
I
C
= 10 µA, I
E
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 10 µA, I
C
= 0
V
CE
= 20V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 300mA, I
B
= 30mA
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 500 mA
V
CE
= 10V, I
C
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
2SD602
2SD602A
2SD602
2SD602A
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEO
I
EBO
V
CE(sat)
h
FE(1)
h
FE(2)
f
T
C
OB
MIN.
30
60
25
50
5
-
-
-
85
40
-
-
TYP.
-
-
-
-
MAX.
-
-
-
0.1
0.1
UNIT
V
V
V
μA
μA
V
-
-
-
200
-
0.6
340
-
-
15
MHz
pF
CLASSIFICATION OF h
FE
1
Rank
Range
2SD602
2SD602A
Q
85 - 170
85 - 170
R
120 - 240
120 - 240
S
170 - 340
170 - 340
01-June-2005 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
