2SD596
Elektronische Bauelemente
0.7A , 30V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current gain
Complementary to 2SB624
A
L
3
SOT-23
3
Top View
C B
1
2
2
MARKING
DV4
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7 inch
K
1
E
D
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
30
25
5
700
200
150, -55~150
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
1
1
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE
f
T
C
ob
Min.
30
25
5
-
-
200
50
-
0.6
170
-
Typ.
-
-
-
-
-
-
-
-
-
-
12
Max.
-
-
-
0.1
0.1
320
-
0.6
0.7
-
-
Unit
V
V
V
µA
µA
Test Condition
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=700mA
I
C
=700mA, I
B
=70mA
V
CE
=6V, I
C
=10mA
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=10MH
Z
Collector to Emitter Saturation Voltage
1
Base to Emitter Saturation Voltage
Transition Frequency
Collector output capacitance
V
V
MHz
pF
Note:
1. Pulse width≦350µs, Duty Cycle≦2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Jul-2011 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
