2SD2403Q
Elektronische Bauelemente
RoHS Compliant Product
D
Plastic-Encapsulate Transistor
SOT-89
D1
A
Features
• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
E1
• This transistor is also available in the TO-223 case with the
type designation PZT2403
b1
b
L
E
e
e1
C
Mechanical Data
Case:
SOT-89 Plastic Package
Weight:
approx. 0.016g
Marking Code:
156
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500TYP
2.900
0.900
3.100
1.100
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
Min
Dimensions In Inches
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
0.060TYP
0.114
0.035
0.122
0.043
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
Maximum Ratings and Thermal Characteristics
(T
A
= 25 C unless otherwise noted)
O
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Power Dissipation at T
A
= 25°C
Thermal Resistance Junction to Ambiant Air
Junction Temperature
Storage Temperature Range
Notes:
Device on alumina substrate.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
tot
R
θJA
T
j
T
S
Value
80
60
5.0
3
6
1.0
150
(1)
150
–55 to +150
f = 30MHz
Min
80
60
5
-
-
-
-
-
-
70
100
80
40
140
-
-
-
Typ
-
-
-
-
-
0.12
0.43
0.9
0.8
200
200
170
80
175
45
800
-
Max
-
-
-
100
100
0.2
0.6
1.25
1.0
-
300
-
-
-
-
-
30
Unit
V
V
V
A
W
°C/W
°C
°C
Electrical Characteristics
(T
J
= 25¡C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cotoff Current
Collector Cutoff Current
Collector-emitter Saturation Voltage 1
Collector-emitter Saturation Voltage 2
Base-emitter Saturation Voltage
Base-emitter xxx Voltage
DC Current Gain 1
DC Current Gain 2
DC Current Gain 3
DC Current Gain 4
Gain-Bandwidth Product
On-Time
Off-Time
Output Capacitance
http://www.SeCoSGmbH.com
Symbol
V
CBO
V
CEO
V
EBO
I
EBO
I
CBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
V
BE(on)
h
FE1
h
FE2
h
FE3
h
FE4
f
T
t
on
t
off
C
ob
Test Condition
I
C
= 100uA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100uA, I
C
= 0
V
CE
= 4V, I
C
= 0
V
CB
= 60V, I
E
= 0
I
C
= 1A, I
B
= 0.1A
I
C
=
3A, I
B
=
0.3A
I
C
=
1A, I
B
=
0.1A
I
C
=
1A, V
CE
=
2V
V
CE
=
2V, I
C
=
50 mA
V
CE
=
2V, I
C
=
500 mA
V
CE
=
2V, I
C
=
1 A
V
CE
=
2V, I
C
=
2 A
V
CE
=
5V, I
C
=
100 mA
f=100MHz
V
CC
=
10V, I
C
=
500 mA
I
B1
= I
B2
= 50mA
V
CB
=
10V, f
=
2 MHz
Unit
V
V
V
nA
nA
V
V
V
V
MHz
ns
pF
Page 1 of 2
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
