2SD2150
Elektronische Bauelemente
3 A, 40 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
Excellent Current-to-Gain Characteristics
Low Collector Saturation Voltage,
V
CE(SAT)
=0.5V(Max.) for I
C
/ I
B
=2A/0.1A
Collector
1
A
E
C
4
2
3
2
B C
E
B
D
F
G
H
K
J
L
1
Base
3
Emitter
MARKING
CFR
CFS
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction & Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATINGS
40
20
6
3
500
150, -55~150
UNIT
V
V
V
A
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
*
f
T
*
C
OB
MIN.
40
20
6
-
-
180
-
-
-
TYP.
-
-
-
-
-
-
-
290
25
MAX.
-
-
-
0.1
0.1
560
0.5
-
-
UNIT
V
V
V
µA
µA
V
MHz
pF
TEST CONDITIONS
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=5 V, I
C
=0
V
CE
=2V, I
C
= 100mA
I
C
=2A, I
B
= 100mA
V
CE
=2V, I
C
=-500mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
*Pulse test: t
P
≦300µS,
δ≦0.02
CLASSIFICATION OF hFE
Rank
Range
Marking
R
180-390
CFR
S
270-560
CFS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
6-Nov-2009 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
