2SD2114
Elektronische Bauelemente
0.5A , 25V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High DC Current Gain.
High Emitter-Base Voltage. V
EBO
=12V (Min.)
A
L
3
SOT-23
3
Top View
C B
1
2
2
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SD2114-V
820~1800
BBV
2SD2114-W
1200~2700
BBW
F
K
1
E
D
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
J
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
25
20
12
500
250
150, -55~150
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
On Resistance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
R
(on)
Min.
25
20
12
-
-
820
-
-
-
-
Typ.
-
-
-
-
-
-
-
350
8
0.8
Max.
-
-
-
0.5
0.5
2700
0.4
-
-
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=10V, I
C
=0
V
CE
=3V, I
C
=10mA
I
C
=500mA, I
B
=20mA
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
in
=0.1V(rms), I
B
=1mA, f=1KH
z
Any changes of specification will not be informed individually.
24-Feb-2011 Rev. B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
