2SD2142
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
NPN Plastic
Plastic-Encapsulate Transistor
SOT-23
3.COLLECTOR
FEATURES
Darlington connection for a high h
FE
High input impedance
MARKING：R1M
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
1.BASE
2.EMITTER
A
L
3
1
Top View
2
B S
V
G
C
D
H
K
J
All Dimension in mm
MAXIMUM RATINGS*
T
A
=25 C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
40
32
12
300
o
Units
V
V
V
mA
mW
o
200
-55~150
C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
MIN
40
32
12
0.1
0.1
5000
1.4
200
2.5
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=100μA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=12V,I
C
=0
V
CE
=3V,I
C
=100mA
I
C
=200mA,I
B
=0.2mA
V
CE
=5V,I
C
=10mA,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2007 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
