2SD2118
Elektronische Bauelemente
5A , 50V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low V
CE(sat)
. V
CE(sat)
= 0.25V(Typ.) (I
C
/I
B
= 4A / 0.1A)
Excellent DC Current Gain Characteristics
D-Pack (TO-252)
CLASSIFICATION OF h
FE
Product-Rank
Range
2SD2118-Q
120~270
2SD2118-R
180~390
A
B
C
D
PACKAGE INFORMATION
Package
TO-252
MPQ
2.5K
Leader Size
13 inch
Collector
M
K
GE
HF
N
O
P
J
2
REF.
1
Base
3
Emitter
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.35
6.8
5.20
5.50
2.15
2.40
0.45
0.58
6.8
7.5
2.40
3.0
5.40
6.25
0.64
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.64
0.90
0.50
1.1
0.9
1.65
0
0.15
0.43
0.58
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction and Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
,T
STG
Ratings
50
20
6
5
1
150 , -55~150
Unit
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
OB
Min.
50
20
6
-
-
120
-
-
-
Typ.
-
-
-
-
-
-
-
150
30
Max.
-
-
-
0.5
0.5
390
1
-
-
Unit
V
V
V
µA
µA
Test Conditions
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=500mA
V
MHz
pF
I
C
=4A, I
B
=100mA
V
CE
=6V, I
C
=50mA, f=100MHz
V
CB
=20V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Nov-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
