2SD2114
Elektronische Bauelemente
0.5 A, 25 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High DC current gain :h
FE
= 1200(Typ)
High emitter-base voltage. V
EBO
=12V (Min.)
Low V
CE (sat)
. V
CE (sat)
= 0.18V (Typ.) (I
C
/I
B
=500mA / 20mA)
PACKAGE DIMENSIONS
3
Collector
1
Base
SOT-23
Dim
A
2
Emitter
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
B
C
D
G
A
L
3
H
K
B S
2
J
J
K
C
Top View
1
L
S
V
V
G
D
H
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
STG
Ratings
25
20
12
500
250
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
I
CBO
I
EBO
*h
FE
1
V
CE(sat)
fT
C
OB
R
(ON)
Min.
25
20
12
-
-
820
-
-
-
-
Typ.
-
-
-
-
-
-
-
350
8
0.8
Max.
-
-
-
0.5
0.5
2700
0.4
-
-
-
Unit
V
V
V
uA
uA
I
C
=10uA
I
C
=1mA
I
E
=10uA
V
CB
=20V
V
EB
=10V
V
CE
=3V, I
C
=10mA
V
MHz
pF
Ω
Test Conditions
I
C
=500mA, I
B
=20mA
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
IN
=0.1V(rms),I
B
=1mA, f=1KHZ
CLASSIFICATION OF h
FE
1
Rank
Range
Marking
01-June-2005 Rev. A
V
820 - 1800
BBV
W
1200 - 2700
BBW
Page 1 of 3
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