2SD1616A
Elektronische Bauelemente
1A , 120V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
A
B
D
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Power dissipation
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
2SD1616A-L
135~270
2SD1616A-K
200~400
2SD1616A-U
300~600
E
C
F
G
H
J
Emitter
Collector
Base
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
120
60
6
1
750
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage*
Base to Emitter Saturation Voltage*
Base to Emitter Voltage*
Transition Frequency
Collector Output Capacitance
Turn on time
Storage time
Fall time
*pulse test: PW
≦
350μs,
σ
≦
2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
t
on
t
S
t
F
Min.
120
60
6
-
-
135
81
-
-
0.6
100
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
0.07
0.95
0.07
Max.
-
-
-
0.1
0.1
600
-
0.3
1.2
0.7
-
19
-
-
-
Unit
V
V
V
μA
μA
Test Condition
I
C
=10μA, I
E
=0
I
C
=2mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=1A
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=50mA
V
CE
=2V, I
C
=100mA
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=10V, I
C
=100mA,
I
B1
=-I
B2
=10mA
V
V
V
MHz
pF
μs
12-Apr-2011 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
