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2SD1005 参数 Datasheet PDF下载

2SD1005图片预览
型号: 2SD1005
PDF下载: 下载PDF文件 查看货源
内容描述: 1A , 100V NPN塑料封装晶体管 [1A , 100V NPN Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 76 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
2SD1005
Elektronische Bauelemente
1A , 100V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
SOT-89
4
High Breakdown Voltage
Excellent DC Current Gain Linearity
A
B C
3
E
C
1
2
CLASSIFICATION OF h
FE(1)
Product-Rank
Range
Marking
2SD1005-W
90~180
BW
2SD1005-V
135~270
BV
2SD1005-U
B
E
D
F
G
H
K
J
L
200~400
BU
Collector
2
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
Leader Size
7 inch
1
Base
REF.
A
B
C
D
E
F
3
Emitter
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.25
2.60
1.50
1.85
0.89
1.20
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Maximum Junction to Ambient
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
100
80
5
1
500
250
150, -55~150
Unit
V
V
V
A
mW
° /W
C
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition Frequency
Collector Output Capacitance
*Pulse test
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
*
V
BE(sat)
*
V
BE
*
f
T
C
OB
Min.
100
80
5
-
-
-
90
25
-
-
0.6
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
160
12
Max.
-
-
-
0.1
0.1
400
-
0.5
1.5
0.7
-
-
Unit
V
V
V
µA
µA
Test conditions
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=500mA
V
V
V
MHz
pF
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V,I
C
=10mA
V
CE
=5V,I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
10-Nov-2011 Rev. A
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