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2SC5706D 参数 Datasheet PDF下载

2SC5706D图片预览
型号: 2SC5706D
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅通用晶体管 [NPN Silicon General Purpose Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 497 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SC5706D的Datasheet PDF文件第2页浏览型号2SC5706D的Datasheet PDF文件第3页  
2SC5706
NPN Silicon
Elektronische Bauelemente
RoHS Compliant Product
D
General Purpose Transistor
TO-252
6. 50
5. 30
0. 15
0. 10
2. 30
0. 51
0. 05
0. 10
FEATURES
9. 70
0. 75
Large current capacitance
Low collector-to-emitter saturation voltage
High-speed switching
High allowable power dissipation
MARKING : 5706
(With Date Code)
C
5
0. 20
0. 10
0. 51
0
0. 10 1. 20
0. 10
5
5
0. 15
0. 6
0
9
0. 51
0. 80
0. 10
2. 30
0. 10
0. 60
2. 30
0. 10
0. 10
MAXIMUM RATINGS* T
A
=25 unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Junction Temperature
Storage Temperature
Total Power Dissipation
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CBO
I
CP
I
B
T
j
T
STG
P
D
P
D
(TC=25°C)
O
1. 60
B
Ratings
80
80
50
6
5
7.5
1.2
+150
-55~+150
0.8
15
C
E
Unit
V
V
V
V
A
A
A
°C
°C
W
W
ELECTRICAL CHARACTERISTICS (Tamb=25
C
unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
http://www.SeCoSGmbH.com
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)1
*V
CE
(sat)2
*V
BE
(sat)
*h
FE
fT
C
ob
ton
tstg
tf
Min
80
80
50
6
-
-
-
-
-
200
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
400
15
35
300
20
Max
-
-
-
-
1
1
135
240
1.2
560
-
-
-
-
-
Unit.
V
V
V
V
µA
µA
mV
mV
V
Test Conditions
I
C
=10µA, I
E
=0
I
C
=100µA, R
BE
=0
I
C
=1mA, R
BE
=∞
I
E
=10µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=1A, I
B
=50mA
I
C
=2A, I
B
=100mA
I
C
=2A, I
B
=100mA
V
CE
=2V, I
C
=500mA
MHz
pF
ns
ns
ns
V
CE
=10V, I
C
=500mA
V
CB
=10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
2. 70
0. 20
5. 50
0. 10