2SC5585
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon
General Purpose Transistor
FEATURES
High Current
Low V
CE(sat)
- V
CE(sat)
250mV at I
C
= 200mA/I
B
=10mA
A
SOT-523
Dim
A
B
C
D
S
2
3
Top View
1
Min
1.50
0.78
0.80
0.28
0.90
0.00
0.10
0.35
0.49
1.50
Max
1.70
0.82
0.82
0.32
1.10
0.10
0.20
0.41
0.51
1.70
MARKING CODE
BX
L
B
G
H
D
3.
Collector
2.
Base
J
K
C
J
K
G
L
S
1.
Emitter
H
All Dimension in mm
Maximum Ratings
(Ta=25
o
C
unless otherwise specified)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
(continuous)
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Value
15
12
6
0.5
0.15
-55~+150
-55~+150
Unit
V
V
V
A
W
o
o
C
C
Electrical Characteristics
(Tamb=25
o
C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
gain
Collector-emitter saturation voltage
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
15
12
6
Typ.
Max.
Unit
V
V
V
μA
μA
Conditions
I
C
=10
μA,
I
E
=0
I
C
=1mA, I
B
=0
I
E
=10
μA,
I
C
=0
V
CB
=15V, I
E
=0
V
EB
= 6V, I
C
=0
V
CE
=2V, I
C
=10mA
0.1
0.1
270
680
0.25
320
7.5
V
MHz
pF
I
C
=200mA, I
B
=10mA
V
CE
=2V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
Collector
Output capacitance
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
