2SC4672
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
500 mW, 60 V
NPN Plastic-Encapsulate Transistor
SOT-89
FEATURES
Low saturation voltage, typically V
CE(SAT)
=0.1V at I
C
/I
B
=1A/50mA.
Excellent DC current gain characteristics.
Complements the 2SA1797
B
F
G
H
K
J
L
4
1
A
E
2
3
C
Collector
D
Base
Emitter
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATING
60
50
6
2
500
150, -55~150
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
MIN
60
50
6
-
-
82
-
-
-
TYP
-
-
-
-
-
-
210
25
MAX
-
-
-
0.1
0.1
270
0.35
-
-
UNIT
V
V
V
μA
μA
V
MHz
pF
TEST CONDITION
I
C
=50μA, I
E
= 0
I
C
=1mA, I
B
= 0
I
E
=50μA, I
C
= 0
V
CB
=60 V, I
E
= 0
V
EB
=5 V, I
C
= 0
V
CE
=2V, I
C
=0.5A
I
C
=1A, I
B
=50mA
V
CE
= 2V, I
C
= 500mA, f = 100 MHz
V
CB
= 10V, I
E
= 0 , f=1MHz
CLASSIFICATION OF h
FE
Rank
Range
Marking
P
82~180
DKP
Q
120~270
DKQ
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Mar-2010 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
