2SC4618
Elektronische Bauelemente
NPN General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low
collector capacitance
A
3
SOT-523
L
3
Low r
bb
, high gain, and excellent noise characteristics
Collector
Top View
C B
1
2
2
3
1
K
E
D
1
Base
F
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.50
1.70
1.45
1.75
0.75
0.85
0.70
0.90
0.90
1.10
0.25
0.33
H
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.00
0.15
0.28
0.40
0.10
0.20
-
-
0.75
0.85
J
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(at Ta = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
STG
RATINGS
40
25
5
50
0.15
+150, -55 ~ +150
UNIT
V
V
V
mA
W
℃
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
TEST CONDITIONS
I
C
= 50 µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50 µA, I
C
= 0
V
CB
= 24 V, I
E
= 0
V
EB
= 3 V, I
C
= 0
I
C
= 10mA, I
B
= 1 mA
V
CE
= 6V, I
C
= 1 mA
V
CE
= 6V, I
E
= 1 mA, f = 100 MHz
V
CE
= 6V, I
E
= 0 A, f = MHz
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
OB
MIN.
40
25
5
-
-
-
56
150
-
TYP.
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.5
0.5
0.3
270
-
2.2
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF h
FE
Rank
Range
Marking
N
56 – 120
AN
P
82 – 180
AP
Q
120 – 270
AQ
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-December-2008 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
