2SC4617
Elektronische Bauelemente
0.15A , 60V
NPN Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low C
ob
. C
ob
=2.0pF
Complement of 2SA1774
A
M
3
SOT-523
3
Top View
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SC4617-Q
120~270
BQ
2SC4617-R
180~390
BR
2SC4617-S
270~560
BS
F
K
C B
1
2
2
1
L
E
D
G
REF.
Millimeter
Min.
Max.
1.5
1.7
1.45
1.75
0.75
0.85
0.7
0.9
0.9
1.1
0.15
0.25
H
REF.
G
H
J
K
L
M
J
Millimeter
Min.
Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25
0.325
PACKAGE INFORMATION
Package
SOT-523
MPQ
3K
LeaderSize
7’ inch
A
B
C
D
E
F
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
60
50
7
150
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
DC current gain
Transition frequency
Collector output capacitance
*
Pulse Test :Pulse Width
≤300us,D.C ≤
2%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
Min.
60
50
7
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
180
-
Max.
-
-
-
0.1
0.1
0.4
560
-
3.5
Unit
V
V
V
μA
μA
V
Test Conditions
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
= 7V, I
C
=0
I
C
=50mA, I
B
=5mA
V
CE
=6V, I
C
=1mA
MHz
pF
V
CE
=12V, I
E
=2mA, f=100MHz
V
CB
=12V, I
E
=0, f=1MHz
24-Feb-2011 Rev. D
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
