2SC4226
Elektronische Bauelemente
0.1A , 20V
NPN Silicon Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
●
●
●
SOT-323
A
3
3
Low noise
High gain
Power dissipation.(P
C
=150mW)
1
L
Top View
C B
1
2
2
APPLICATIONS
●
K
E
D
High frequency low noise amplifier.
F
G
H
J
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SC4226-P
40~80
r23
2SC4226-Q
70~140
r24
2SC4226-R
125~250
r25
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
Base
Collector
Emitter
ABSOLUTE MAXIMUM RATINGS
( T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
20
12
3
100
150
+150, -65 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
( T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Feed Back Capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
C
re
NF
Min.
20
12
3
-
-
40
3.0
-
-
Typ.
-
-
-
-
-
110
4.5
0.7
1.2
Max.
-
-
-
1
1
250
-
1.5
2.5
Unit
V
V
V
A
A
GHz
pF
dB
Testing Condition
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=10V, I
E
=0
V
EB
=1V, I
C
=0
V
CE
=3V, I
C
=7mA
V
CE
=3V, I
E
=7mA
V
CE
=3V, I
E
=0, f=1MHz
V
CE
=3V, I
C
=7mA, f=1GHz
24-Feb-2011 Rev. B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
