2SC4215
Elektronische Bauelemente
0.02A , 40V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small reverse transfer capacitance：Cre = 0.55pF (typ.).
Low noise figure：NF=2dB (typ.) (f=100 MHz)
SOT-323
A
3
3
L
Top View
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SC4215-R
40~80
QR
2SC4215-O
70~140
QO
2SC4215-Y
100~200
QY
F
K
C B
1
2
2
1
E
D
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
40
30
4
20
100
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Time Constant
Transition Frequency
Reverse Transfer Capacitance
Noise Figure
Power Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Cc.r
bb
f
T
C
re
NF
Gpe
Min.
40
30
4
-
-
40
-
260
-
-
17
Typ.
-
-
-
-
-
-
-
550
0.55
2
23
Max.
-
-
-
0.1
0.5
200
25
-
-
5
-
Unit
V
V
V
μA
μA
ps
MHz
pF
dB
dB
Test Condition
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=1mA, f=30MHz
V
CE
=6V, I
C
=1mA
V
CB
=10V, f=1MHz
V
CC
=6V, I
C
=1mA, f=100MHz,
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Mar-2011 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
