欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SC4177 参数 Datasheet PDF下载

2SC4177图片预览
型号: 2SC4177
PDF下载: 下载PDF文件 查看货源
内容描述: NPN塑封装晶体管 [NPN Plastic-Encapsulate Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 104 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
2SC4177
Elektronische Bauelemente
0.1A , 60V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-323
A
3
3
High DC Current Gain.
High Voltage.
Complementary to 2SA1611
1
L
Top View
2
C B
1
2
APPLICATIONS
K
E
D
General Purpose Amplification
F
G
H
J
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SC4177-L4
90~180
L4
2SC4177-L5
135~270
L5
2SC4177-L6
200~400
L6
2SC4177-L7
300~600
L7
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
Collector
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch

Base


Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
60
50
5
100
150
833
150, -55~150
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
1
Collector-Base Saturation Voltage
Base-emitter Saturation Voltage
Base-emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
Min.
60
50
5
-
-
90
-
-
0.55
-
-
Typ.
-
-
-
-
-
-
-
-
-
250
3
Max.
-
-
-
100
100
600
0.3
1
0.65
-
-
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Condition
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
Note:
1. Pulse test: pulse width≦350μs, duty cycle≦2.0%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Mar-2011 Rev. A
Page 1 of 1